POET Technologies Inc.

12
in response to McWitty's message

"POET has found a way to grow successive layers of InGaAs on GaAs wafers, each with a little more indium, until they achieve a substrate on which both n-type and p-type transistors can be fabricated."

Those successive layers apparently filled the P "holes" which effectively solved the problem of slower "hole" conduction. This solution alone is why POET will be a great success imo.

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POET Technologies Inc.
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