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Toronto, ON, and Storrs, CT, February 24, 2014 –POET Technologies Inc. (TSX-V: PTK, OTCQX: POETF) (“the Company”) – announced today the fabrication of infrared (IR) detectors, using its proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated electronic and optical devices on a single semiconductor wafer.
The achievement of these devices marks a significant milestone in development, realizing with a commercial foundry the integration of both electronic devices (n-channel transistors) with optical devices (IR detector) in a monolithic process.
The accomplishment is made more significant because the POET wafers used for the IR devices were fabricated with an independent foundry, BAE Systems’ Microelectronics Center in Nashua, New Hampshire. BAE Systems has produced compound semiconductor devices based on gallium arsenide for more than 20 years for use in its defense, radar, and communications systems. This milestone, therefore, represents the integration by a third party of the optoelectronic process previously demonstrated in POET laboratories.
“Having IR detection for the first time is a major milestone for the POET technology,” said Dr. Pane Chao, technical director at BAE Systems’ Microelectronics Center. “BAE Systems’ relationship with POET Technologies is mutually beneficial in that we are able to supply foundry services while being exposed to this rapidly evolving capability.”
