This comment has me on very high alert. "Chu concluded, “GaN CMOS IC was considered difficult or impossible, due to the challenge in making P-channel transistor and integrating an N-channel transistor. Our recent work opened up the possibility of making GaN CMOS IC’s.” Could this infringe on Dr. Taylor's patents? I mean come on, there can't be a bunch of ways to figure this out. I thought our biggest competitive advantage was we were the only ones to have figured this out in v-111 materials? Techies Give me a pat on the head and tell me everything is going to be alright. And yes I realize that GAN holds different properties for power consumption/speeds but it's the P and N channels I'm concerned about. They have to be infringing one way or another?
