POET Technologies Inc.

I believe the company has stated that they will be using CHFET as per the following paragraph from this article

The p-types could ultimately achieve about a 1900 cm2/(V·s) hole mobility in the strained InGaAs quantum well, which is not as high a figure as the n-types, which achieve 8500 cm2/ (V·s). Both are higher than silicon, at 1200 cm2/ (V·s). POET has high hopes that it can eventually boost the n-types to greater than 12,000 in order to realize extremely high digital logic rates with complementary HFETs.

These articles describe CHFET's, which are apparently well suited to GaA's.

..and yes, he's a genius.