3D NAND:
Handy said the industry has visibility to hit 12nm before it hits a brick wall, and that’s when 3D should kick in, but there’s still a learning curve ahead since 3D NAND uses processes never applied in the production of semiconductors, he said. “The transition is going to take longer than anybody expected.”
Link: an older press realease to 3D NAND
It is not really that fast, if you take this statement:
Toshiba’s new process replaces its 19nm process technology, and is aimed at providing a transitional step to 3D NAND, said Scott Nelson, senior VP of Toshiba America Electronic Components’ memory business unit. Toshiba’s 15nm process works in conjunction with improved peripheral circuitry technology to create chips that achieve the same write speed as chips formed with second generation 19nm process technology, but boost the data transfer rate to 533 megabits a second -- 1.3 times faster -- by employing a high-speed interface.
Here is a Forbes news to the 3D NAND:
www.forbes.com/sites/jimhandy/2014/05/23/how-hard-can-it-be-to-make-3d-nand-flash-chips/
Link to the Video: Layer to produce 3D NAND:
For me it looks to complex and as far as i read the Forbes Samsung Production of that Chip is rare seen in the world, yet!
