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In electronics, a short-channel effect is an effect whereby a MOSFET in which thechannel length is the same order of magnitude as the depletion-layer widths (xdD, xdS) of the source and drain junction, behaves differently from other MOSFETs.
As the channel length L is reduced to increase both the operation speed and the number of components per chip, the so-called short-channel effects arise.[1]
The short-channel effects are attributed to two physical phenomena:
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the limitation imposed on electron drift characteristics in the channel,
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the modification of the threshold voltage due to the shortening channel length.
In particular five different short-channel effects can be distinguished:[2]
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drain-induced barrier lowering and punchthrough
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surface scattering
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velocity saturation
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impact ionization
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hot electron effect
-(Marketwired - March 4, 2014)
Drive for Feature Size to 100-nm Range (MS-8)
The Company introduced a milestone associated with reducing feature size to the 100-nm range in scale, and has previously announced that it realized submicron device operation from an initial 800-nm down to 200-nm.
POET is moving steadily towards the goal of 100-nm feature sizes for the transistors within the POET platform, and has stabilized feature definition at the sub-200-nm level. Short channel considerations are being addressed with new innovations, and the critical step of isolating source-drain and gate contacts with oxygen implantation is nearing completion.The 100-nm goal is matched to the state-of-the-art commercial III-V foundry capabilities and will demonstrate greater than 20x speed improvement together with lower power consumption by 4x to 10x, depending on the application, compared to silicon at smaller nodes.
Although timelines are always subject to review depending on partner needs, the technical team sees no significant technical roadblocks ahead. POET anticipates completion of the 100-nm milestone by the end of April 2014.
