POET Technologies Inc.

in response to Doodlebug's message

The way i read it it's all has to do with the different molecular structure of Gallium Arseide (GaAs) and silicon (SI) ....More free electrons (-), more empty holes(+) making the transistors more eficient , all that crap that I know nothing about but know that 100 nm in GaAs is probably as good as Si in 16nm or in that range.

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turr
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POET Technologies Inc.
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